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| PTF 10122 50 Watts WCDMA, 2.1-2.2 GHz GOLDMOSTM Field Effect Transistor Description The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * * * * * * * INTERNALLY MATCHED Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 50 Watts Min - Gain = 11.0 dB Typ - Efficiency = 35% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power 60 50 40 30 30 20 10 0 0 1 2 3 4 5 6 20 10 0 Output Power (Watts) 50 40 Efficiency (%) A-12 1012 3456 2 994 6 VDD = 28 V IDQ = 600 mA f = 2.17 GHz Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 15 W, IDQ = 600 mA, f = 2.11 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 600 mA, f = 2.17 GHz) Drain Efficiency (VDD = 28 V, POUT = 50 W, IDQ = 600 mA, f = 2.17 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 50 W, IDQ = 600 mA, f = 2.17 GHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. Symbol G ps P-1dB hD Y Min 10.0 50 30 -- Typ 11.0 -- 35 -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF 10122 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance e Conditions VGS = 0 V, ID = 100 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 150 mA VDS = 10 V, ID = 2 A Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 -- 3.0 -- Typ -- -- -- 4.0 Max -- 2.0 5.0 -- Units Volts mA Volts Siemens Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 20 200 237 1.35 -40 to +150 0.74 Unit Vdc Vdc C Watts W/C C C/W Typical Performance 14 50 Efficiency @ P-1dB Gain 40 30 Output Power & Efficiency 12 11 70 60 50 40 13 12 Gain (dB) Gain (dB) Output Power (W) 11 10 9 8 7 Gain 10 9 8 7 2000 VDD = 28 V IDQ = 600 mA POUT = 15 W VDD = 28 V IDQ = 600 mA 2100 Efficiency (%) 2200 30 20 2300 6 2100 2125 2150 0 20 -5 -10 Return Loss 10 -15 -20 -25 0 2175 2200 Frequency (MHz) Frequency (MHz) 2 Return Loss (dB) Efficiency (%) Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Broadband Test Fixture Performance e Output Power vs. Supply Voltage 75 -20 PTF 10122 Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 600 mA -30 3rd Order Output Power (Watts) f1 = 2199 MHz, f2 = 2200 MHz 65 IMD (dBc) -40 5th -50 7th -60 -70 55 45 IDQ = 600 mA f = 2.2 GHz 35 22 24 26 28 30 32 34 0 10 20 30 40 50 Supply Voltage (Volts) Output Power (Watts-PEP) Power Gain vs. Output Power 12 240 Capacitance vs. Supply Voltage * 24 IDQ = 600 mA Cds and Cgs (pF) Power Gain (dB) 10 200 160 VGS = 0 V f = 1 MHz 18 120 80 40 0 12 8 Cds 6 IDQ = 150mA 6 0.1 1.0 VDD = 28 V f = 2.2 GHz 10.0 100.0 Crss 0 0 10 20 30 40 Output Power (Watts) Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these results. Bias Voltage vs. Temperature 1.03 1.02 Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 30 Temp. (C) 80 130 0.400 1.383 2.367 3.350 4.333 5.317 Voltage normalized to 1.0 V Series show current (A) 3 Crss IDQ = 300 mA Cgs PTF 10122 Impedance Data VDD = 28 V, POUT = 50 W, IDQ = 600 mA Z Source D e Z0 = 50 W Z Load G S Frequency GHz 2.00 2.05 2.10 2.15 2.20 2.25 2.30 R Z Source W jX -7.20 -7.80 -8.80 -8.90 -7.30 -3.00 -0.60 R 2.88 3.70 4.80 8.00 9.50 11.00 10.00 Z Load W jX -0.90 -1.30 -1.50 -1.90 -2.00 -1.70 -1.40 1.05 1.30 1.50 1.40 1.30 1.22 1.30 Test Circuit Test Circuit Block Diagram for f = 2.1-2.2 GHz Q1 PTF 10122 .240 l @ 2.15 GHz .0281 l @ 2.15 GHz .085 l @ 2.15 GHz .104 l @ 2.15 GHz .120 l @ 2.15 GHz .063 l @ 2.15 GHz .216 l @ 2.15 GHz .174 l @ 2.15 GHz 10 mF Chip Cap LDMOS RF Transistor Microstrip 50 W Microstrip 14.7 W Microstrip 9.5 W Microstrip 78 W Microstrip 6.82 W Microstrip 10.88 W Microstrip 65 W Microstrip 50 W ATC 100 B C2, C10 0.1 mF Chip Cap ATC 100 B C3, C4, C5, C6 -- 10 pF Chip Cap ATC 100 B C7 0.1 mF, 50 V Digi-Key Capacitor 2.2 QBK C8 100 mF, 50 V Digi-Key Capacitor L1 2.7 nH Chip Inductor L2 6mm SMT Ferrite Bead R1, R2 220 W Chip Resistor Digi-Key 2.2 QBK Circuit Board -- Dielectric Thickness = 0.050", er = 6.0 @ 1 MHz, 2 oz. Copper, TMM6, Rogers l1 l2 l3 l4 l5 l6 l7 l8 C1, C9 4 e PTF 10122 e A-1234569946 10122 Parts Layout (not to scale) Artwork (not to scale) 5 PTF 10122 Package Mechanical Specifications Package 20248 e Unless otherwise specified all tolerance 0.005" Pins: 1.Drain 2.Source 3.Gate Lead Thickness: 0.004 +0.002/-0.001" Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1998 Ericsson Inc. EUS/KR 1301-PTF10122 Uen Rev. A 11-16-99 6 |
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